量子阱LD有源区量子阱数目的优化设计%OPTIMIZATION DESIGN OF QUANTUM WELLS NUMBER IN ACTIVE CAVITY OF QUANTUM WELL LD
河南大学,物理与电子学院,河南,开封,475004 河南省科学院,能源研究所有限公司,郑州,450008 河南省科学院,郑州,450002
2009-12-21
量子阱LD 腔体参数 有源区量子阱数目 优化设计
采用直观的载流子、光子库模型,导出半导体激光器速率方程,得到输入电流、输出光功率的关系以及激光器腔体参数与注入电流的关系,从而给出在设计激光器时遇到的相关限制的方程,以及LD电流与某种形式的电流增益转换因子的关系,根据增益曲线上的最佳工作点来优化有源区量子阱数目.给出了共面量子阱LD在固定有源长度、固定无源区长度的共面量子阱激光器的量子阱数目优化方案.%The relationship between laser cavity parameter and the injection current can be obtained based on input current and output light power of Laser Diode(LD),and then the relative limited equation of LD design,i.e.,the relationship between LD current and conversion factor of current gain,is given accordingly.The number of quantum wells is optimized according to the optimal point of the gain curves.Optimized scheme of the number of quantum wells of coplanar quantum wells LD is given in the condition of fixed active cavity length and the inactive cavity length.
